91 citations · 219 across the 6 of their papers we have counts for
6 papers
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12
We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Probe and Control of the Reservoir Density of States in Single-Electron Devices
M. Mottonen, K. Y. Tan, K. W. Chan +11
We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two con…
Coherent Tunneling Adiabatic Passage with the Alternating Coupling Scheme
Lenneke M. Jong, Andrew D. Greentree, Vincent I. Conrad +2
The use of adiabatic passage techniques to mediate particle transport through real space, rather than phase space is becoming an interesting possibility. We have investigated the p…
Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
A. Morello, C. C. Escott, H. Huebl +5
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electr…