91 citations · 219 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 16 cited
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
cond-mat.mtrl-sci2010★ 27 cited
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…