All-electrical control of single ion spins in a semiconductor

Abstract

We propose a method for all-electrical initialization, control and readout of the spin of single ions substituted into a semiconductor. Mn ions in GaAs form a natural example. In the ion's ground state the Mn core spin magnetic moment locks antiparallel to the spin and orbital magnetic moment of a bound valence hole from the GaAs host. Direct electrical manipulation of the ion spin is possible because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling two or more ion spins can be achieved using electrical gates to control the size of the valence hole wave function near the semiconductor surface. This proposal for coherent manipulation of individual ionic spins and controlled coupling of ionic spins via electrical gates alone may find applications in extremely high density information storage and in scalable coherent or quantum information processing.

5 pages, 3 figures

References in corpus (8)

• Quantum Computation with Quantum Dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Universal Quantum Computation with the Exchange Interaction
• Spatial structure of an individual Mn acceptor in GaAs
• Multiband tight-binding model of local magnetism in GaMnAs
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy
• Entanglement and errors in the control of spins by optical coupling

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• Geometric phases in semiconductor spin qubits: Manipulations and decoherence
• Quantum Computing with Acceptor Spins in Silicon
• Electric-field control of a hydrogenic donor's spin in a semiconductor
• Electrically-controllable RKKY interaction in semiconductor quantum wires
• Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects
• Chemical trends of substitutional transition metal dopants in diamond: an ab initio study
• Nanometer-scale Exchange Interactions Between Spin Centers in Diamond
• Spin dephasing due to a random Berry phase
• All-electrical spectroscopy of topological phases in semiconductor-superconductor heterostructures
• Observation of the symmetry of core states of a single Fe impurity in GaAs
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Theory of Single Photon Detection by a Photoreceptive Molecule and a Quantum Coherent Spin Center