Electric-field control of a hydrogenic donor's spin in a semiconductor
arXiv:0808.0208 · doi:10.1103/PhysRevLett.102.017603
Abstract
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
References in corpus (5)
- Coherent control of a single electron spin with electric fields
- Orbital mechanisms of electron spin manipulation by an electric field
- Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
- All-electrical control of single ion spins in a semiconductor
- Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
Cited by in corpus (18)
- Spin dynamics in semiconductors
- g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots
- Subharmonic transitions and Bloch-Siegert shift in electrically driven spin resonance
- Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
- Hyperfine Stark effect of shallow donors in silicon
- Interplay of Electron and Nuclear Spin Noise in GaAs
- Second Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot
- A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots
- Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
- Spin-orbit-induced circulating currents in a semiconductor nanostructure
- Maximal Rabi frequency of an electrically driven spin in a disordered magnetic field
- Manipulation of the Land g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods
- Assessing the orbital selective Mott transition with variational wave functions
- Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures
- Optical rotation of heavy hole spins by non-Abelian geometrical means
- g-Factor Modification in a Bulk InGaAs Epilayer by an In-plane Electric Field
- Large Stark Effect for Li Donor Spins in Si
- Control of Majorana Edge Modes by a g-factor Engineered Nanowire Spin Transistor