Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate

Abstract

We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.

4 pages, 3 figures

References in corpus (6)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• Coherent single electron spin control in a slanting Zeeman field
• Electrically tunable g-factors in quantum dot molecular spin states
• Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure
• Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits
• Anisotropic electron g-factor in quantum dots with spin-orbit interaction

Cited by in corpus (20)

• g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots
• Voltage tunability of single spin-states in a quantum dot
• Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations
• Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching
• Electric-field control of a hydrogenic donor's spin in a semiconductor
• Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
• Spin-orbit-induced circulating currents in a semiconductor nanostructure
• Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms
• Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots
• Electric g Tensor Control and Spin Echo of a Hole-Spin Qubit in a Quantum Dot Molecule
• Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects
• Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods
• Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths
• Anisotropic g factor in InAs self-assembled quantum dots
• Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires
• Topology driven g-factor tuning in type-II quantum dots
• Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures
• Electron and hole g tensors of neutral and charged excitons in single quantum dots by high-resolution photocurrent spectroscopy
• Manipulation of spin cluster qubits by electric-field induced modulation of exchange coupling, $g$-factor, and axial anisotropy
• The impact of hole $g$-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots