Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

Abstract

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\mathbf{k}\cdot \mathbf{p}$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.

8 pages, 7 figures, revtex, epsf

References in corpus (1)

• Electronic structure of strained InP/GaInP quantum dots

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