Growth and optical properties of self-assembled InGaAs Quantum Posts

Abstract

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.

Proccedings paper for MSS-13, 7 pages, 4 figures

References in corpus (7)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
• Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule
• Photon statistics from coupled quantum dots
• Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
• Recent advances in exciton based quantum information processing in quantum dot nanostructures
• Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule

Cited by in corpus (5)

• Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves
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• Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO${}_3$-GaAs hybrid
• Direct observation of dynamic surface acoustic wave controlled carrier injection into single quantum posts using phase-resolved optical spectroscopy
• Surface acoustic wave mediated carrier injection into individual quantum post nano emitters