A semiconductor exciton memory cell based on a single quantum nanostructure
arXiv:0805.1819 · doi:10.1021/nl800911n
Abstract
We demonstrate storage of excitons in a single nanostructure, a self-assembled Quantum Post. After generation electron and holes forming the exciton are separated by an electric field towards opposite ends of the Quantum Post inhibiting their radiative recombination. After a defined time such spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the Quantum Post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.
23 pages
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Cited by in corpus (18)
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- Linear polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional systems
- Direct observation of dynamic surface acoustic wave controlled carrier injection into single quantum posts using phase-resolved optical spectroscopy
- Attractive dipolar coupling between stacked exciton fluids
- Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
- Surface acoustic wave mediated carrier injection into individual quantum post nano emitters
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- Strain driven migration of In during the growth of InAs/GaAs quantum posts
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- Symmetry breaking for semiconductor excitons induced by Coulomb coupling between heavy and light holes
- Topical review on acousto-optical Floquet engineering of single-photon emitters