Quantum confinement effects in InAs-InP core-shell nanowires

Abstract

We report the detection of quantum confinement in single InAs-InP core-shell nanowires. The wires having an InAs core with ~25 nm diameter are characterized by emission spectra in which two peaks are identified under high excitation intensity conditions. The peaks are caused by emission from the ground and excited quantized levels, due to the quantum confinement in the plane perpendicular to the nanowire axis. We have identified in the emission spectra different energy contributions related to the wurtzite structure of the wires, the strain between the wurtzite core and shell, and the confinement energy of the InAs core. Calculations based on 6-band strain-dependent k.p theory allow the theoretical estimation of the confined energy states in such materials and we found these results to be in good agreement with those from the photoluminescence studies.

10 pages, 4 figures, accepted to Journal of Physics: Condensed Matter

References in corpus (3)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• GW band structure of InAs and GaAs in the wurtzite phase
• Fabrication, optical characterization and modeling of strained core-shell nanowires

Cited by in corpus (6)

• Predicted band structures of III-V semiconductors in wurtzite phase
• Electronic bands of III-V semiconductor polytypes and their alignment
• GW band structure of InAs and GaAs in the wurtzite phase
• First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
• Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
• Structural Investigation of InAs-AlInAs and InAs-AlInP Core-Shell Nanowires