Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase

Abstract

Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we predict the frequency dependent dielectric functions for nine non-Nitride wurtzite phase III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). Their complex dielectric functions are calculated in the dipole approximation by evaluating the momentum matrix elements on a dense grid of special k-points using empirical pseudopotential wave functions. Corrections to the momentum matrix elements accounting for the missing core states are made using a scaling factor which is determined by using the optical sum rules on the calculated dielectric functions for the zincblende polytypes. The dielectric function is calculated for polarizations perpendicular and parallel to the c-axis of the crystal.

References in corpus (4)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Predicted band structures of III-V semiconductors in wurtzite phase
• Optical properties of SiC nanotubes: A systematic $\text{ab initio}$ study
• Quantum confinement effects in InAs-InP core-shell nanowires

Cited by in corpus (6)

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• Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy
• Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
• Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
• Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
• Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy