Quantum wires from coupled InAs/GaAs strained quantum dots

Abstract

The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which the miniband widths and effective masses are controlled by the distance between the islands, d. The miniband structure is calculated as a function of d, and it is shown that for d>4 nm the miniband is narrower than the optical phonon energy, while the gap between the first and second minibands is greater than the optical phonon energy. This leads to decreased optical phonon scattering, providing improved quantum wire behavior at high temperatures. These miniband properties are also ideal for Bloch oscillation.

5 pages revtex, epsf, 8 postscript figures

References in corpus (2)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• Electronic structure of strained InP/GaInP quantum dots

Cited by in corpus (8)

• Semiconductor Superlattices: A model system for nonlinear transport
• Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
• Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
• Magnetic field dependence of the exciton energy in a quantum disk
• Symmetry of $k\cdot p$ Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure
• Absence of correlation between built-in electric dipole moment and quantum Stark effect in InAs/GaAs self-assembled quantum dots
• Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: Zero magnetic field
• Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires