Absence of correlation between built-in electric dipole moment and quantum Stark effect in InAs/GaAs self-assembled quantum dots
arXiv:cond-mat/0204579 · doi:10.1103/PhysRevB.67.125308
Abstract
We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below kV/cm in high dots. Eight-band calculations demonstrate this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affects the hole ground state. Our conclusions are supported by two independent experiments.
4 pages, 4 figures
Cited by in corpus (5)
- Importance of second-order piezoelectric effects in zincblende semiconductors
- Anticrossings in Foerster Coupled Quantum Dots
- Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
- Longitudinal wave function control in single quantum dots with an applied magnetic field
- Tuning the carrier tunneling in a single quantum dot with a magnetic field in Faraday geometry