Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

Abstract

Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for $\mathbf{k}\ne 0$ and $\mathbf{k}=0$ conduction and $\mathbf{k}=0$ valence bands, through the formulation of $\mathbf{k}\cdot \mathbf{p}$ calculations for $\mathbf{k}$-indirect transitions, up to the excitonic structure of $\Gamma$-transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates enabling us to make a direct comparison to the (In,Ga)As/GaAs quantum dot system. We also discuss the realization of quantum gates.

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Cited by in corpus (8)

• Single-Particle-Picture Breakdown in laterally weakly confining GaAs Quantum Dots
• Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots
• Electric field induced tuning of electronic correlation in weakly confining quantum dots
• Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
• On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
• GaAs quantum dots under quasi-uniaxial stress: experiment and theory
• Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
• Sign-switching of superexchange mediated by few electrons under non-uniform magnetic field