Excitonic fine structure splitting in type-II quantum dots

Abstract

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the morphology of the structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.

References in corpus (11)

• Entangled Photon Pairs from Semiconductor Quantum Dots
• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Observation of strongly entangled photon pairs from a nanowire quantum dot
• Manipulating exciton fine-structure in quantum dots with a lateral electric field
• Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
• Inversion of exciton level splitting in quantum dots
• Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices
• Polarization entangled photons from quantum dots embedded in nanowires
• Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
• Non post-selected indistinguishable single photons generated by a quantum dot under resonant excitation
• Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

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• Proposed Scheme to Generate Bright Entangled Photon Pairs by Application of a Quadrupole Field to a Single Quantum Dot
• Polarization anisotropy of the emission from type-II quantum dots
• Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
• Topology driven g-factor tuning in type-II quantum dots
• GaAs quantum dots under quasi-uniaxial stress: experiment and theory
• Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
• Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots
• Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
• Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics
• Coulomb correlated multi-particle states of weakly confining GaAs quantum dots