Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

Abstract

We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In${}_{0.6}$Ga${}_{0.4}$As/GaAs and strain-free GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected, while significant changes are observed for strain-free quantum dots.

Submitted to PRB

References in corpus (3)

• Tunable Indistinguishable Photons From Remote Quantum Dots
• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Electric-field-induced coherent coupling of the exciton states in a single quantum dot

Cited by in corpus (2)

• Conditions for entangled photon emission from (111)B site-controlled Pyramidal quantum dots
• Excitonic fine structure splitting in type-II quantum dots