Type-II InAs/GaAsSb/GaAs quantum dots as artificial quantum dot molecules

Abstract

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4μeV / 325μeV for the case (i) / (ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. As the predicted tunability range was limited, we propose an approach for its enhancement.

References in corpus (2)

• Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
• Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

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• Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
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