activity
20062021
most citedConsistent set of band parameters for the group-III nitrides AlN, GaN, and InN

404 citations · 1.4k across the 19 of their papers we have counts for

collaborators

19 papers

cond-mat.mes-hall2021★ 12 cited

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Petr Steindl, Elisa Maddalena Sala, Benito Alén +2

Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carr…

cond-mat.mes-hall2019★ 26 cited

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Petr Steindl, Elisa Maddalena Sala, Benito Alén +3

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and i…

cond-mat.mes-hall2019★ 29 cited

Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

Petr Klenovský, Andrei Schliwa, Dieter Bimberg

Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indire…

quant-ph2011

Experimental Optimum Maximum-Confidence Discrimination and Optimum Unambiguous Discrimination of Two Mixed Single-Photon States

Gesine A. Steudle, Sebastian Knauer, Ulrike Herzog +4

We present an experimental implementation of optimum measurements for quantum state discrimination. Optimum maximum-confidence discrimination and optimum unambiguous discrimination…

physics.optics2010★ 12 cited

Finite Element Simulation of the Optical Modes of Semiconductor Lasers

J. Pomplun, S. Burger, F. Schmidt +5

In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical…

cond-mat.mtrl-sci2008★ 15 cited

Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots

M. Winkelnkemper, M. Dworzak, T. P. Bartel +3

We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees…