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Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
M. Winkelnkemper, M. Dworzak, T. P. Bartel +3
We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees…
GaN/AlN Quantum Dots for Single Qubit Emitters
M. Winkelnkemper, R. Seguin, S. Rodt +2
We study theoretically the electronic properties of -plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum com…
Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots
M. Feucker, R. Seguin, S. Rodt +2
Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the…
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke, Momme Winkelnkemper, Abdallah Qteish +3
We have derived consistent sets of band parameters (band gaps, crystal field-splittings, band gap deformation potentials, effective masses, Luttinger and EP parameters) for AlN, Ga…