404 citations · 1.4k across the 14 of their papers we have counts for
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Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots
R. Seguin, A. Schliwa, T. D. Germann +4
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence…
Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
Momme Winkelnkemper, Andrei Schliwa, Dieter Bimberg
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN…
Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots
R. Seguin, S. Rodt, A. Schliwa +3
A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of q…
Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
R. Seguin, A. Schliwa, S. Rodt +3
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed.…
Multi-excitonic complexes in single InGaN quantum dots
R. Seguin, S. Rodt, A. Strittmatter +4
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines origi…
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
Patrick Rinke, Abdallah Qteish, Momme Winkelnkemper +3
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV…