Effect of annealing on the hyperfine interaction in InAs/GaAs quantum dots

Abstract

The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled. The modeling is verified by comparison of the calculated optical transitions and of the experimental data on photoluminescence for set of the annealed quantum dots. The localization volume of the electron in the ground state and the partial contributions of In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of the annealing temperature. It is established that the contribution of indium nuclei into the hyperfine interaction becomes predominant up to high annealing temperatures (T = 980 C) when the In content in the quantum dots does not exceed 25%. Effect of the nuclear spin fluctuations on the electron spin polarization is numerically modeled. Effective field of the fluctuations is found to be in good agreement with experimental data available.

References in corpus (5)

• Electron spin relaxation by nuclei in semiconductor quantum dots
• Electron spin decoherence in quantum dots due to interaction with nuclei
• Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots
• Bistability of the Nuclear Polarisation created through optical pumping in InGaAs Quantum Dots
• Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

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