Piezo-optic effect of high-harmonic generation in semiconductors
arXiv:2012.14572 · doi:10.1103/PhysRevB.103.205202
Abstract
We theoretically investigate the piezo-optic effect of high-harmonic generation (HHG) in shear-strained semiconductors. By focusing on a typical semiconductor, GaAs, we show that there is optical activity, meaning different responses to right-handed and left-handed elliptically polarized electric fields. We also show that this optical activity is more pronounced for higher harmonics whose perturbative order exceeds the band-gap energy. These findings point to a useful pathway for strain engineering of nonlinear optics to control the reciprocity of HHG.
arXiv comment9 pages, 4 figures
References in corpus (20)
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Elastic properties of freely suspended MoS2 nanosheets
- Sub-cycle control of terahertz high-harmonic generation by dynamical Bloch oscillations
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Cuba - a library for multidimensional numerical integration
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Real-time observation of interfering crystal electrons in high-harmonic generation
- Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
- Raman 2D-Band Splitting in Graphene: Theory and Experiment
- High harmonic imaging of ultrafast many-body dynamics in strongly correlated systems
- Enhanced Structural Stability and Photo Responsiveness of CH3NH3SnI3 Perovskite via Pressure-Induced Amorphization and Recrystallization
- Mechanics of freely-suspended ultrathin layered materials
- Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd3As2
- Low-threshold optically pumped lasing in highly strained Ge nanowires
- Diabatic Mechanisms of Higher-Order Harmonic Generation in Solid-State Materials under High-Intensity Electric Fields
- Ab Initio calculation of band gap renormalization in highly excited GaAs
- Higher-Order Harmonic Generation caused by Elliptically Polarized Electric Fields in Solid-State Materials
- High-harmonic generation in GaAs beyond the perturbative regime
- Sub-band picture of high-harmonic generation in solids
- The Luttinger-Kohn theory for multiband Hamiltonians: A revision of ellipticity requirements
Cited by in corpus (5)
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- Shear-Strain Controlled High-Harmonic Generation in Graphene
- Efficient Control of High Harmonic Generation in Carbon Nanotubes using the Aharonov-Bohm Effect
- High-harmonic generation in the Rice-Mele model: Role of intraband current originating from interband transition