High-harmonic generation in GaAs beyond the perturbative regime

Abstract

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.

arXiv comment16 pages, 9 figures

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Cited by in corpus (9)

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• Shear-Strain Controlled High-Harmonic Generation in Graphene
• High harmonic generation from electrons moving in topological spin textures
• Energy-band echoes: Time-reversed light emission from optically driven quasiparticle wavepackets
• Piezo-optic effect of high-harmonic generation in semiconductors
• Noncollinear phase-matching of high harmonic generation in solids
• Theory for Fourier-limited attosecond pulse generation in solids