High-order sideband generation in bulk GaAs

Abstract

When an intense THz field at frequency f_THz is applied to excitons resonantly created in bulk GaAs by a near IR laser at frequency f_NIR, sidebands are observed at frequencies f_sideband = f_NIR + 2nf_THz, where n is an integer. At temperature T=10 K, sidebands of order -4 {greater than or equal to} 2n {greater than or equal to} 16 are observed. Sidebands up to 10th order persist at 170 K.

6 pages, 3 figures

References in corpus (1)

• THz driven quantum wells: Coulomb interactions and Stark shifts in the ultrastrong coupling regime

Cited by in corpus (8)

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• Optical Frequency Combs from High-Order Sideband Generation
• Sub-band picture of high-harmonic generation in solids
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