Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Abstract

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}}=0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n{f}_{\text{THz}}$, with $-8\le 2n\le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}}=36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$.

5 pages, 4 figures

References in corpus (1)

• High-order sideband generation in bulk GaAs

Cited by in corpus (5)

• Dynamical birefringence: Electron-hole recollisions as probes of Berry curvature
• Reconstruction of Bloch wavefunctions of holes in a semiconductor
• Optical Frequency Combs from High-Order Sideband Generation
• Sub-band picture of high-harmonic generation in solids
• An explicit formula for high-order sideband polarization by extreme tailoring of Feynman path integrals