Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring

Abstract

By applying an electric field perpendicular to a semiconductor quantum ring we show that it is possible to modify the single particle wave function between quantum dot (QD)-like to ring-like. The constraints on the geometrical parameters of the quantum ring to realize such a transition are derived. With such a perpendicular electric field we are able to tune the Aharanov-Bohm (AB) effect for both single particles and for excitons. The tunability is in both the strength of the AB-effect as well as in its periodicity. We also investigate the strain induce potential inside the self assembled quantum ring and the effect of the strain on the AB effect.

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Cited by in corpus (8)

• Excitonic Aharonov-Bohm effect in a two-dimensional quantum ring
• Aharonov-Bohm effect for excitons in a semiconductor quantum ring dressed by circularly polarized light
• Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots
• Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
• Remarks on the Study of Electronic Properties and Photoionization Process in Rotating 2D Quantum Rings
• Topology driven g-factor tuning in type-II quantum dots
• Electric and magnetic fields effects on the excitonic properties of elliptic core-multishell quantum wires
• Magnetic field induced shell-to-core confinement transition in type-II semiconductor quantum wires