Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

Abstract

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are determined by solving many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nano-template is explored.

arXiv comment9 pages, 12 figures

References in corpus (6)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• Comparison of two methods for describing the strain profiles in quantum dots
• Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions
• Carrier-Carrier Correlations in an Optically Excited Single Semiconductor Quantum Dot
• Multiband theory of multi-exciton complexes in self-assembled quantum dots
• Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

Cited by in corpus (3)

• Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots
• Theoretical study of nuclear spin polarization and depolarization in self-assembled quantum dots
• Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots