activity
20022011
most citedOn the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

151 citations · 213 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2011★ 1 cited

Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

B. C. Scannell, I. Pilgrim, A. M. See +11

The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors ge…

cond-mat.mtrl-sci2010★ 40 cited

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

J. Masek, F. Maca, J. Kudrnovsky +10

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and…

cond-mat.mes-hall2009★ 10 cited

Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot

E. E. Vdovin, O. Makarovsky, A. Patane +2

We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that beco…

cond-mat.mtrl-sci2007★ 151 cited

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

T. Jungwirth, Jairo Sinova, A. H. MacDonald +15

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A ther…

cond-mat.mes-hall2002★ 11 cited

A Model for the Voltage Steps in the Breakdown of the Integer Quantum Hall Effect

A. M. Martin, K. A. Benedict, F. W. Sheard +1

In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism…