Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

Abstract

We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.

13 pages, 3 figures, submitted to Applied Physics Letters

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Cited by in corpus (4)

• Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)
• High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
• Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP