Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

Abstract

We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10${}^{18}$ to over 10${}^{20}$ cm${}^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.

14 pages, 7 figures, to be published at Phys. Rev. B (2010)

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Cited by in corpus (2)

• The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
• Interplay between the electrical transport properties of GeMn thin films and Ge substrates