Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
arXiv:0910.1981 · doi:10.1063/1.3257363
Abstract
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.
12 pages, 3 figures, accepted for publication at Appl. Phys. Lett. accepted for publication at Appl. Phys. Lett
References in corpus (6)
- Carrier-induced ferromagnetism in p-Zn1-xMnxTe
- Structural and magnetic properties of Mn-implanted Si
- Fe implanted ferromagnetic ZnO
- Magnetic and electronic transport percolation in epitaxial GeMn films
- Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
- Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors
Cited by in corpus (4)
- Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
- The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
- Interplay between the electrical transport properties of GeMn thin films and Ge substrates
- Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation