Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors

Abstract

We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.

10 pages, 5 figures

References in corpus (3)

• Clustering in a precipitate free GeMn magnetic semiconductor
• Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
• Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Cited by in corpus (5)

• Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
• Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
• Memory effect of Mn${}_5$Ge${}_3$ nanomagnets embedded inside a Mn-diluted Ge matrix
• Interplay between the electrical transport properties of GeMn thin films and Ge substrates
• Metal-insulator transition induced by fluctuations of the magnetic potential in semiconductors with magnetic impurities