Memory effect of Mn${}_5$Ge${}_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Abstract

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.

10 pages, 4 figures,. submitted to Appl. Phys. Lett

References in corpus (3)

• Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets
• Spin-glass-like behavior of Ge:Mn
• Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors

Cited by in corpus (5)

• MnSi${}_{1.7}$ nanoparticles embedded in Si: Superparamagnetism with a collective behavior
• Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
• The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
• Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
• Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation