The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
arXiv:1005.4325 · doi:10.1063/1.3428770
Abstract
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.
7 pages, 3 figures
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