The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
arXiv:1005.4325 · doi:10.1063/1.3428770
Abstract
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.
arXiv comment7 pages, 3 figures
References in corpus (12)
- Carrier-induced ferromagnetism in p-Zn1-xMnxTe
- Clustering in a precipitate free GeMn magnetic semiconductor
- Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
- Structural and magnetic properties of Mn-implanted Si
- Magnetic and transport percolation in diluted magnetic semiconductors
- Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
- Magnetic and electronic transport percolation in epitaxial GeMn films
- Spin-glass-like behavior of Ge:Mn
- Anomalous Hall effect in insulating Ga1-xMnxAs
- Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
- Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
- Memory effect of MnGe nanomagnets embedded inside a Mn-diluted Ge matrix