Anomalous Hall effect in insulating Ga1-xMnxAs

Abstract

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMnxAs eventually disappears, and paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in Ga1-xMnxAs (x = 0.085) has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma [Phys.Rev.Lett. 88, 247202 (2002)].

15 pages, 5 figures. Phys. Rev. B (to be published)

References in corpus (4)

• Anomalous Hall effect in ferromagnetic semiconductors
• Polaron percolation in diluted magnetic semiconductors
• Magnetic and transport percolation in diluted magnetic semiconductors
• High-Temperature Hall Effect in Ga(1-x)Mn(x)As

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