activity
20042024
most citedAnomalous Hall effect in insulating Ga1-xMnxAs

34 citations · 79 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024★ 3 cited

Enhancement of piezoelectric response in V doped LiNbO3 films deposited by RF magnetron sputtering

Xiaomei Zeng, Ting Lv, Xiangyu Zhang +5

LiNbO3 films doped with vanadium (V) were deposited using RF magnetron sputtering technique. To realize doping with a wider range of V concentration, a 30 mm V metal inlaid target…

cond-mat.mtrl-sci2011★ 7 cited

Crossover critical behavior of Ga1-xMnxAs

Sh. U. Yuldashev, Kh. T. Igamberdiev, Y. H. Kwon +5

The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that…

cond-mat.mtrl-sci2010★ 8 cited

Specific heat study of Ga1-xMnxAs

Sh. U. Yuldashev, Kh. T. Igamberdiev, Sejoon Lee +5

Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn co…

physics.optics2005★ 27 cited

Deep level emission of ZnO nanoparticles deposited inside UV opal

S. M. Abrarov, Sh. U. Yuldashev, T. W. Kim +2

The temperature-dependent photoluminescence (PL) spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids betwee…

cond-mat.mtrl-sci2004★ 34 cited

Anomalous Hall effect in insulating Ga1-xMnxAs

Sh. U. Yuldashev, H. C. Jeon, H. S. Im +3

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivit…