64 citations · 65 across the 2 of their papers we have counts for
8 papers
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Field emission from AlGaN nanowires with low turn-on field
Filippo Giubileo, Antonio Di Bartolomeo, Yun Zhong +2
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…
Electron irradiation on multilayer PdSe field effect transistors
A. Di Bartolomeo, F. Urban, A. Pelella +4
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…