133 citations · 1.2k across the 19 of their papers we have counts for
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Gas dependent hysteresis in MoS field effect transistors
F. Urban, F. Giubileo, A. Grillo +10
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Field Emission Characterization of MoS2 Nanoflowers
Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…
A WSe2 vertical field emission transistor
Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…
Field emission from self-catalyzed GaAs nanowires
Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo +5
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-…
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…
Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
F. Giubileo, A. Di Bartolomeo, N. Martucciello +4
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and…
Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
Antonio Di Bartolomeo, Filippo Giubileo, Laura Iemmo +6
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We dem…
Field emission from single and few-layer graphene flakes
S. Santandrea, F. Giubileo, V. Grossi +5
We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were p…