Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

Abstract

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

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• Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities
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• Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance
• Pressure-tunable large anomalous Hall effect of the ferromagnetic kagome-lattice Weyl semimetal Co3Sn2S2
• Anomalous Hall effect in a two dimensional electron gas with magnetic impurities
• Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors
• Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
• Transition from coherent mesoscopic single particle transport to proximity Josephson-current
• Spin-dependent electron-impurity scattering in two-dimensional electron systems
• Enhanced spin Hall effect in strong magnetic disorder