Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

Abstract

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

References in corpus (3)

• Dissipationless Quantum Spin Current at Room Temperature
• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
• Universal Scaling Behavior of Anomalous Hall Effect and Anomalous Nernst Effect in Itinerant Ferromagnets

Cited by in corpus (4)

• Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance
• Anomalous Hall effect in a two dimensional electron gas with magnetic impurities
• Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
• Spin-dependent electron-impurity scattering in two-dimensional electron systems