Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb${}_2$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

arXiv comment5 pages, 5 figures

References in corpus (8)

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• Kondo Insulator description of spin state transition in FeSb2
• Optical investigation of the metal-insulator transition in $FeS{b}_2$
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Cited by in corpus (8)

• Electronic thermoelectric power factor and metal-insulator transition in FeSb2
• Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb${}_2$
• Giant Carrier Mobility in Single Crystals of FeSb2
• Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping
• Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors
• Vacancy defect control of colossal thermopower in FeSb2
• Enhanced electron correlations in FeSb${}_2$
• Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2