Giant Carrier Mobility in Single Crystals of FeSb2

Abstract

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.

arXiv comment5 pages, 3 figures. Applied Physics Letters (in press)

References in corpus (8)

• Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2
• Kondo Insulator description of spin state transition in FeSb2
• Optical investigation of the metal-insulator transition in $FeS{b}_2$
• The semiconductor-to-ferromagnetic-metal transition in FeSb2
• Two-Carrier Transport in Epitaxially Grown MnAs
• Anisotropy in the magnetic and electrical transport properties of Fe1-xCrxSb2
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• Low-temperature magnetotransport of narrow-gap semiconductor FeSb2
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• Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb${}_2$
• Evidence for electron-phonon interaction in Fe${}_{1-x}$M${}_x$Sb${}_2$ (M=Co, Cr) single crystals
• Structural and optical studies of FeSb2 under high pressure
• Enhanced electron correlations in FeSb${}_2$
• Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2