First order transition from correlated electron semiconductor to ferromagnetic metal in single crystalline FeSi1-xGex

Abstract

The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator. The phase diagram is consistent with a correlation induced insulator-metal transition in conjunction with disorder on the Si/Ge ligand site.

References in corpus (1)

• First-order transition between a small-gap semiconductor and a ferromagnetic metal in the isoelectronic alloys FeSi${}_{1-x}$Ge${}_x$

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