activity
20052013
most citedFerromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

100 citations · 261 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2013★ 75 cited

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

Pawel Bruski, Yori Manzke, Rouin Farshchi +3

We demonstrate the electrical injection and detection of spin-polarized electrons in the Co2FeSi/GaAs hybrid system using lateral transport structures. Spin valve signatures and ch…

cond-mat.mtrl-sci2008★ 33 cited

Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting

M. A. Scarpulla, R. Farshchi, P. R. Stone +4

We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser me…

cond-mat.mtrl-sci2007★ 8 cited

Hydrogen patterning of Ga1-xMnxAs for planar spintronics

R. Farshchi, P. D. Ashby, D. J. Hwang +4

We demonstrate two patterning techniques based on hydrogen passivation of Ga1-xMnxAs to produce isolated ferromagnetically active regions embedded uniformly in a paramagnetic, insu…

cond-mat.mtrl-sci2007★ 9 cited

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

C. Bihler, M. Kraus, M. S. Brandt +5

We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie t…

cond-mat.mtrl-sci2007★ 22 cited

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

C. Bihler, M. Kraus, H. Huebl +7

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMn…

cond-mat.mtrl-sci2006★ 10 cited

Compositional tuning of ferromagnetism in Ga1-xMnxP

R. Farshchi, M. A. Scarpulla, P. R. Stone +7

We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xM…