Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime

Abstract

We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.

arXiv comment6 pages, 6 figures included

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Cited by in corpus (2)

• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects