Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

Abstract

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn${}^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.

4 pages, 2 figures

References in corpus (5)

• Anomalous Hall effect in ferromagnetic semiconductors
• Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
• Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems

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• Anisotropic Magnetoresistance components in (Ga,Mn)As
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• Ultrafast demagnetization in the sp-d model: a theoretical study
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• Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
• Anisotropic magnetoresistance: materials, models and applications
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• Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities
• Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a review
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• Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
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• Femtosecond Control of the Magnetization in Ferromagnetic Semiconductors
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• Soliton Staircases and Standing Strain Waves in Confined Colloidal Crystals
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• Theoretical models of ferromagnetic III-V semiconductors
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• Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities