Tunnel Magneto-resistance in GaMnAs: going beyond Jullière formula

Abstract

The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The materials are described in the 6 band $\mathbf{k}\cdot \mathbf{p}$ model which includes spin orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of of spin polarization and barrier thickness. As a result of the stong spin orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula.

arXiv comment3 pages, 3 figures included

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