Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures
arXiv:cond-mat/0509629 · doi:10.1016/j.physe.2005.12.074
Abstract
The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.
4 paker, 2 figures, submited to Phisica E
References in corpus (6)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Electrical detection of spin accumulation in a p-type GaAs quantum well
- 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
- Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
- Tunnel Magneto-resistance in GaMnAs: going beyond Jullière formula
- Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode
Cited by in corpus (6)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Semiconductor Spintronics
- Spin-dependent tunneling in modulated structures of (Ga,Mn)As
- Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors
- Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach
- Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs