Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

Abstract

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-Büttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.

arXiv comment4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Comm

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Cited by in corpus (14)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent tunneling in modulated structures of (Ga,Mn)As
• Giant current-driven domain wall mobility in (Ga,Mn)As
• Intrinsic Coupling between Current and Domain Wall Motion in (Ga,Mn)As
• Theory of spin waves in ferromagnetic (Ga,Mn)As
• Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors
• Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
• Spin-transfer physics and the model of ferromagnetism in (Ga,Mn)As
• Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets
• Spin-orbit-coupling induced torque in ballistic domain walls: equivalence of charge-pumping and nonequilibrium magnetization formalisms
• Magnetic patterning of (Ga,Mn)As by hydrogen passivation
• Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As
• Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As
• Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning