Spin-transfer physics and the model of ferromagnetism in (Ga,Mn)As

Abstract

We describe recent progress and open questions in the physics of current-induced domain-wall displacement and creep in (Ga,Mn)As. Furthermore, the reasons are recalled why, despite strong disorder and localization, the p-d Zener model is suitable for the description of this system.

13 pages, 1 figure, to be published in J. Magn. Magn. Materials, section "Current Perspectives"

References in corpus (19)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
• Origin and control of high-temperature ferromagnetism in semiconductors
• Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
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• The Crossover from Impurity to Valence Band in Diluted Magnetic Semiconductors: The Role of the Coulomb Attraction by Acceptor
• Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As

Cited by in corpus (9)

• Electrodynamics of Correlated Electron Materials
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Influence of a Transport Current on Magnetic Anisotropy in Gyrotropic Ferromagnets
• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Self-consistent calculation of spin transport and magnetization dynamics
• Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
• Current-induced spin torques in III-V ferromagnetic semiconductors
• Investigation of a possible electronic phase separation in the magnetic semiconductors Ga${}_{1-x}$Mn${}_x$As and Ga${}_{1-x}$Mn${}_x$P by means of fluctuation spectroscopy
• Unified theory of spin and charge in a ferromagnet