Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As

Abstract

The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to the description of this phenomenon. Using different k.p and tight-binding computational schemes, we capture the strong effect of the bulk inversion asymmetry on the Berry curvature and the anomalous Hall conductivity. At the same time, we find it not to affect other important characteristics of (Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy fields. Our results extend the established theories of the anomalous Hall effect in ferromagnetic semiconductors and shed new light on its puzzling nature.

References in corpus (4)

• Semiclassical theories of the anomalous Hall effect
• Magnetoresistance due to edge spin accumulation
• Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
• Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

Cited by in corpus (5)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Theory of spin waves in ferromagnetic (Ga,Mn)As
• Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
• Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
• Direct probing of band-structure Berry phase in diluted magnetic semiconductors