activity
19972005
most citedTheory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets

334 citations · 654 across the 19 of their papers we have counts for

collaborators

19 papers

cond-mat.mes-hall2005★ 51 cited

Charge Sensing of an Artificial H2+ Molecule

M. Pioro-Ladriere, M. R. Abolfath, P. Zawadzki +4

We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize th…

cond-mat.mes-hall2003★ 31 cited

Critical Currents of Ideal Quantum Hall Superfluids

M. Abolfath, A. H. MacDonald, L. Radzihovsky

Filling factor bilayer electron systems in the quantum Hall regime have an excitonic-condensate superfluid ground state when the layer separation is less than a critical…

cond-mat.mes-hall2003★ 9 cited

Optical spin transfer in ferromagnetic semiconductors

J. Fernández-Rossier, Alvaro S. Núñez, M. Abolfath +1

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective ma…

cond-mat.mes-hall2002★ 8 cited

Theory of the tunneling resonances of the bilayer electron systems in strong magnetic field

M. Abolfath, R. Khomeriki, K. Mullen

We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decrease…

cond-mat.mtrl-sci2002★ 79 cited

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

T. Jungwirth, M. Abolfath, Jairo Sinova +2

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{…

cond-mat.mes-hall2001★ 1 cited

Solitons in polarized double layer quantum Hall systems

R. Khomeriki, M. Abolfath, K. Mullen

A new manifestation of interlayer coherence in strongly polarized double layer quantum Hall systems with total filling factor in the presence of a small or zero tunneling is…